Title :
Failure rate predictions for 0.35 μm Flash EEPROM memories from accelerated read disturb tests
Author :
Vermeulen, T. ; Yao, T. ; Lowe, A. ; Cacharelis, P. ; Degraeve, R. ; Van Houdt, J.
Author_Institution :
AMI Semicond. Belgium b.v.b.a., Oudenaarde, Belgium
Abstract :
Anomalous stress-induced leakage current (SILC) through the tunnel oxide is one of the major reliability problems limiting the lifetime of Flash EEPROM memory in the 0.35 μm generation. The charge loss from the floating gate (FG) through the tunnel oxide under accelerated read disturb conditions is modelled with a statistical percolation model. The analysis allows extraction of the oxide trap density (Dot) as a function of the number of program/erase (P/E) cycles and a bit failure rate (BFR) prediction. For a typical tunnel oxide in 0.35 μm Flash memory, the BFR due to read disturb is low in the first two years and reaches a steady state regime afterwards. Both Dot and BFR are expressed as a function of the number of P/E cycles by means of a power law. The analysis allows prediction of the read-disturb lifetime of Flash memory for a given tunnel oxide.
Keywords :
MOS memory circuits; flash memories; integrated circuit reliability; integrated circuit testing; leakage currents; life testing; percolation; 0.35 micron; Flash EEPROM; accelerated read disturb tests; anomalous stress-induced leakage current; bit failure rate prediction; failure rate prediction; floating gate charge loss; memory reliability; oxide trap density; program/erase cycle number; read-disturb lifetime; statistical percolation model; tunnel oxide SILC; Ambient intelligence; EPROM; Electric breakdown; Flash memory; Leakage current; Life estimation; Nonvolatile memory; Predictive models; Testing; Threshold voltage;
Conference_Titel :
Solid-State Device Research conference, 2004. ESSDERC 2004. Proceeding of the 34th European
Print_ISBN :
0-7803-8478-4
DOI :
10.1109/ESSDER.2004.1356541
