Title :
Ferroelectric memory based secure dynamically programmable gate array
Author :
Masui, S. ; Ninomiya, T. ; Oura, M. ; Yokozeki, W. ; Mukaida, K. ; Kawashima, S.
Author_Institution :
Fujitsu Labs. Ltd., Tokyo, Japan
Abstract :
A nonvolatile ferroelectric SRAM based 8-context dynamically programmable gate array enables low-cost field programmable systems by the elimination of off-chip nonvolatile memories. Read and program procedures of the associated configuration memory are securely protected, so that unauthorized users cannot gain access to configuration data. The ferroelectric SRAM configuration memory features 2ns nondestructive read operations along with stable data recall. The logic block circuit is optimized to improve available logic gates for multi-context scheme.
Keywords :
ferroelectric storage; field programmable gate arrays; logic gates; random-access storage; 2 ns; configuration memory; ferroelectric SRAM; logic block circuit; logic gates; low-cost field programmable systems; multi-context scheme; nondestructive read operations; secure dynamically programmable gate array; stable data recall; Ferroelectric materials; Field programmable gate arrays; Logic arrays; Logic circuits; Logic devices; Logic programming; Nonvolatile memory; Programmable logic arrays; Protection; Random access memory;
Conference_Titel :
VLSI Circuits Digest of Technical Papers, 2002. Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-7310-3
DOI :
10.1109/VLSIC.2002.1015083