• DocumentCode
    1903011
  • Title

    Ferroelectric memory based secure dynamically programmable gate array

  • Author

    Masui, S. ; Ninomiya, T. ; Oura, M. ; Yokozeki, W. ; Mukaida, K. ; Kawashima, S.

  • Author_Institution
    Fujitsu Labs. Ltd., Tokyo, Japan
  • fYear
    2002
  • fDate
    13-15 June 2002
  • Firstpage
    200
  • Lastpage
    203
  • Abstract
    A nonvolatile ferroelectric SRAM based 8-context dynamically programmable gate array enables low-cost field programmable systems by the elimination of off-chip nonvolatile memories. Read and program procedures of the associated configuration memory are securely protected, so that unauthorized users cannot gain access to configuration data. The ferroelectric SRAM configuration memory features 2ns nondestructive read operations along with stable data recall. The logic block circuit is optimized to improve available logic gates for multi-context scheme.
  • Keywords
    ferroelectric storage; field programmable gate arrays; logic gates; random-access storage; 2 ns; configuration memory; ferroelectric SRAM; logic block circuit; logic gates; low-cost field programmable systems; multi-context scheme; nondestructive read operations; secure dynamically programmable gate array; stable data recall; Ferroelectric materials; Field programmable gate arrays; Logic arrays; Logic circuits; Logic devices; Logic programming; Nonvolatile memory; Programmable logic arrays; Protection; Random access memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Circuits Digest of Technical Papers, 2002. Symposium on
  • Conference_Location
    Honolulu, HI, USA
  • Print_ISBN
    0-7803-7310-3
  • Type

    conf

  • DOI
    10.1109/VLSIC.2002.1015083
  • Filename
    1015083