Title :
A 1.8-V operation RFCMOS transceiver for Bluetooth
Author :
Komurasaki, H. ; Heima, T. ; Miwa, T. ; Yamamoto, K. ; Wakada, H. ; Yasui, I. ; Ono, M. ; Sano, T. ; Sato, H. ; Miki, T. ; Kato, N.
Author_Institution :
Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
This paper describes a single-chip Bluetooth transceiver LSI, which uses a standard 0.18 /spl mu/m bulk CMOS process. It can operate at a supply voltage of 1.8 V, and includes even a low loss transmit/receive antenna switch (SW) in order to realize high level integration. For lower chip area, a channel selection filter consists of simple linearized source-coupled pairs, and the transceiver occupies 10.2 mm/sup 2/.
Keywords :
CMOS integrated circuits; UHF integrated circuits; VLSI; frequency hop communication; mixed analogue-digital integrated circuits; spread spectrum communication; transceivers; 0.18 micron; 1.8 V; Bluetooth transceiver LSI; RFCMOS transceiver; channel selection filter; linearized source-coupled pairs; low loss antenna switch(SW; single-chip transceiver; transmit/receive antenna switch; Band pass filters; Baseband; Bluetooth; CMOS process; CMOS technology; Energy consumption; Radio frequency; Transceivers; Transmitting antennas; Voltage;
Conference_Titel :
VLSI Circuits Digest of Technical Papers, 2002. Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-7310-3
DOI :
10.1109/VLSIC.2002.1015092
