DocumentCode :
1903253
Title :
Determination of band-gap narrowing in heavily doped n-type GaAs and n-type GaInP from solar cell performance
Author :
Ghannam, M.Y. ; Al Omar, A.S. ; Flamand, G. ; Posthuma, N. ; Poortmans, Jozef ; Mertens, R.P.
Author_Institution :
IMEC vzw, Leuven, Belgium
fYear :
2004
fDate :
21-23 Sept. 2004
Firstpage :
317
Lastpage :
320
Abstract :
Band-gap narrowing (BGN) is determined in heavily doped n-type GaAs and n-type Ga0.5In0.5P from experimental pn junction solar cell performance. A BGN of 82 meV and of 17 meV is determined in GaAs with an n-type doping concentration of 2×1018/cm3 and 1017/cm3, respectively, and an average 95 meV BGN is determined in Ga0.5In0.5P with an n-type doping concentration of 3×1018/cm3. These values agree well with theoretical predictions of a recent model applied to n-type GaAs and adapted here for Ga0.5In0.5P.
Keywords :
III-V semiconductors; doping profiles; energy gap; gallium compounds; indium compounds; photoconductivity; solar cells; BGN; GaAs; GaInP; band-gap narrowing; doping concentration; heavily doped n-type III-V semiconductors; photocurrent; pn junction solar cells; Circuits; Doping; Gallium arsenide; Photoconductivity; Photonic band gap; Photovoltaic cells; Predictive models; Radiative recombination; Surface fitting; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research conference, 2004. ESSDERC 2004. Proceeding of the 34th European
Print_ISBN :
0-7803-8478-4
Type :
conf
DOI :
10.1109/ESSDER.2004.1356553
Filename :
1356553
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1903253
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