DocumentCode
1903269
Title
Analysis of surface-related deep-trap effects on gate-lag phenomena in GaAs MESFETs
Author
Horio, K. ; Yamada, T.
Author_Institution
Fac. of Syst. Eng., Shibaura Inst. of Technol., Tokyo, Japan
fYear
1996
fDate
3-6 Nov. 1996
Firstpage
175
Lastpage
178
Abstract
Effects of surface states on gate-lag phenomena in GaAs MESFETs are studied by 2D simulation. It is shown that the deep-acceptor-like state plays a dominant role in determining the characteristics. To reduce the gate-lag, the deep acceptor should be made electron-trap-like. This can be realized by reducing the surface-state density. Some device structures expected to have less gate-lag are also described.
Keywords
III-V semiconductors; Schottky gate field effect transistors; deep levels; electron traps; gallium arsenide; semiconductor device models; surface states; 2D simulation; GaAs; GaAs MESFETs; deep-acceptor-like state; gate-lag phenomena; surface-related deep-trap effects; surface-state density reduction; Analytical models; Charge carrier processes; Energy capture; Energy states; Gallium arsenide; MESFETs; Modeling; Poisson equations; Systems engineering and theory; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual
Conference_Location
Orlando, FL, USA
ISSN
1064-7775
Print_ISBN
0-7803-3504-X
Type
conf
DOI
10.1109/GAAS.1996.567844
Filename
567844
Link To Document