Title :
Pseudomorphic Gax In1-x As on InP for HEMT Structures Grown by MBE
Author :
Künzel, H. ; Bach, H.-G. ; Böttcher, J. ; Dickmann, J. ; Dämbkes, H. ; Nachtwei, G. ; Heide, S.
Author_Institution :
Heinrich-Hertz-Institut fÿr Nachrichtentechnik Berlin GmbH, Einsteinufer 37, W-1000 Berlin 10, Germany
Abstract :
Material characteristics of strained MBE GaInAs layers on InP have been investigated in dependence of the In-content. Pseudomorphic AlInAs/GaInAs HEMT structures are grown and characterized with systematically increasing the In-content of the channel layer. Preliminary results on 0.25 ¿m gate length devices are presented.
Keywords :
Aluminum alloys; Composite materials; Crystallization; Electric variables measurement; HEMTs; Indium phosphide; Lattices; Pattern matching; Temperature dependence; Thickness measurement;
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location :
Leuven, Belgium
