DocumentCode
1903317
Title
Polysicon Emitter with a Nitrided Interface
Author
Savage, S.M.
Author_Institution
Swedish Institute of Microelectronics, P.O.Box 1084, S-164 21 Kista, Sweden.
fYear
1992
fDate
14-17 Sept. 1992
Firstpage
343
Lastpage
346
Abstract
The processing of polysilicon emitters with a nitrided interfacial layer, and their electrical assessment, is described. It is found that nitrided layers can be grown in a reproducible manner, and that their use with a polysilicon emitter can produce working devices with superior characteristics. The uniformity and stability of these devices are also found to be excellent.
Keywords
Atmosphere; Current measurement; Density measurement; Electric variables measurement; Microelectronics; Stability; Temperature dependence; Temperature distribution; Thickness measurement; Time measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location
Leuven, Belgium
Print_ISBN
0444894780
Type
conf
Filename
5435114
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