DocumentCode :
190338
Title :
Gold-tin eutectic bonding for hermetic packaging of MEMS devices with vertical feedthroughs
Author :
Torunbalci, Mustafa Mert ; Demir, Eyup Can ; Donmez, Inci ; Alper, Said Emre ; Akin, Tayfun
Author_Institution :
MEMS Res. & Applic. Center, Middle East Tech. Univ., Ankara, Turkey
fYear :
2014
fDate :
2-5 Nov. 2014
Firstpage :
2187
Lastpage :
2190
Abstract :
This paper presents a new method for wafer-level hermetic encapsulation of MEMS devices using low-temperature (280 to 300°C) Au-Sn eutectic bonding applied to the recently developed advanced MEMS (A-MEMS) process of the METU-MEMS Research Center, which uses an SOI cap wafer with vertical feedthroughs that does not need any complex via-refill or trench-refill process steps. The Au-Sn eutectic bonding process is achieved at 300°C with a bond pressure of 2 MPa by using a sealing alloy thickness less than 1.5 μm. The package pressure is characterized to be around 250 mTorr, without any getter activation. The remelting temperature of the Au-Sn bonding interface is measured by using differential scanning calorimetry (DSC) analysis and found to be around 280°C, verifying that the bonding is achieved at the desired eutectic composition (80% Au and 20% Sn), also confirmed by the energy dispersive X-ray spectroscopy (EDS) analysis. The shear strengths of several packages are measured to be above 20 MPa, indicating a mechanically-strong bonding. The robustness of the packages is also tested by subjecting them to high temperature storage at 200°C for 24 hours, and no degradation is observed in the hermeticity of the packages at the end of this period.
Keywords :
bonding processes; differential scanning calorimetry; encapsulation; gold compounds; microfabrication; micromechanical devices; packaging; silicon-on-insulator; Au-Sn; MEMS devices; METU-MEMS Research Center; SOI; differential scanning calorimetry analysis; energy dispersive X-ray spectroscopy analysis; eutectic bonding; hermetic packaging; mechanically-strong bonding; pressure 2 MPa; silicon-on-insulator; temperature 280 C to 300 C; time 24 hour; wafer-level hermetic encapsulation; Bonding; Cavity resonators; Gold; Micromechanical devices; Packaging; Sensors; Au-Sn Eutectic Bonding; Vertical Feedthroughs; Wafer Level Hermetic Packaging;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SENSORS, 2014 IEEE
Conference_Location :
Valencia
Type :
conf
DOI :
10.1109/ICSENS.2014.6985473
Filename :
6985473
Link To Document :
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