DocumentCode
1903394
Title
Electrical behaviour of Junctions obtained by rapid thermal annealing of BF2 implanted layers
Author
Polignano, M.L. ; Losavio, A.
Author_Institution
SGS-Thomson Microelectronics, Via Olivetti 2, 20041 Agrate Brianza (MI), Italy
fYear
1992
fDate
14-17 Sept. 1992
Firstpage
363
Lastpage
366
Abstract
The rapid thermal annealing of BF2 implanted layers has been studied for what concerns its impact on the electrical behaviour of p+-n junctions. The evolution of current-voltage characteristics of junctions with increasing temperature of treatment has been followed. Assuming that this evolution reflects the annealing of the implantation damage, a characterization of these junctions versus device temperature provides informations about generation-recombination phenomena related to the residual implantation damage.
Keywords
Character generation; Current-voltage characteristics; Doping; Furnaces; Infrared detectors; Microelectronics; Rapid thermal annealing; Temperature distribution; Temperature measurement; Thermal engineering;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location
Leuven, Belgium
Print_ISBN
0444894780
Type
conf
Filename
5435118
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