DocumentCode
190354
Title
Micromechanical relative humidity sensor based on epitaxial silicon cantilevers
Author
Jian-Qiu Huang ; Dong-Ping Zhu ; Wen-Hao Chen ; Meng Nie
Author_Institution
Key Lab. of MEMS, Southeast Univ., Nanjing, China
fYear
2014
fDate
2-5 Nov. 2014
Firstpage
2219
Lastpage
2222
Abstract
The paper reports a surface micro-machined relative humidity senor base on a silicon epitaxial process. The sensitive structure was fabricated by a single crystal silicon layer so that excellent mechanical and electronic performances of the device were achieved. To optimize the performances of the sensor, an FEM method was used to evaluate the mechanical responses of the structures. A readout circuit and a test system were designed to evaluate the performances of the relative humidity sensor. According to the test results the sensitivity and hysteresis of the relative humidity sensor is 2mV/%RH and 3%RH respectively. The response time of the humidity senor is 65s.
Keywords
elemental semiconductors; finite element analysis; humidity sensors; microsensors; readout electronics; semiconductor epitaxial layers; silicon; FEM method; Si; epitaxial silicon cantilevers; mechanical responses; micromechanical relative humidity sensor; readout circuit; silicon epitaxial process; test system; Crystals; Epitaxial growth; Humidity; Piezoresistance; Silicon; Stress; Time factors;
fLanguage
English
Publisher
ieee
Conference_Titel
SENSORS, 2014 IEEE
Conference_Location
Valencia
Type
conf
DOI
10.1109/ICSENS.2014.6985481
Filename
6985481
Link To Document