DocumentCode :
1903569
Title :
High frequency characteristics of MOSFETs with compact waffle layout
Author :
Wu, Wen ; Lam, Sang ; Ko, Ping K. ; Chan, Mansun
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China
fYear :
2004
fDate :
21-23 Sept. 2004
Firstpage :
381
Lastpage :
384
Abstract :
The high frequency characteristics of waffle MOSFETs are studied. In addition to area saving, the waffle MOSFETs also provide enhancement of the RF characteristics. When compared with the conventional multi-finger layout with the same device width, the waffle MOSFETs provide extra flexibility in the design window. Measured S-parameters from a 0.35 μm technology process, over a wide range of bias conditions, indicate that the waffle MOSFET is capable of offering enhancements in fmax, fT, and minimum noise figure, with careful design.
Keywords :
MOSFET; S-parameters; microwave field effect transistors; 0.35 micron; 200 MHz to 30 GHz; MOSFET bias conditions; MOSFET high frequency characteristics; S-parameters; compact waffle layout; design window flexibility; minimum noise figure; waffle MOSFET; CMOS technology; Consumer electronics; Fingers; Gallium arsenide; MOSFETs; Noise measurement; Parasitic capacitance; Radio frequency; Transceivers; Water;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research conference, 2004. ESSDERC 2004. Proceeding of the 34th European
Print_ISBN :
0-7803-8478-4
Type :
conf
DOI :
10.1109/ESSDER.2004.1356569
Filename :
1356569
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1903569
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