DocumentCode :
1903586
Title :
Advanced III-V HEMT Technology for Microwave and Millimetre-Wave Applications
Author :
Long, A.P. ; Eddison, I.G.
Author_Institution :
GEC-Marconi Materials Technology Ltd., Caswell, Towester, Northants, NN12 8EQ, United Kingdom
fYear :
1992
fDate :
14-17 Sept. 1992
Firstpage :
389
Lastpage :
395
Abstract :
This paper describes the current European status of HEMT technology for analogue MMIC applications at microwave and mm-wave frequencies. Results from three European Foundries (GEC-Marconi, Philips and Thomson) will be presented to illustrate the position. The key technology issues will be discussed, including the requirement for high quality epitaxial material. This latter point has been addressed commercially by both MBE (Picogiga) and MOVPE (Epitaxial Products International) growth techniques.
Keywords :
Epitaxial growth; Epitaxial layers; Gallium arsenide; HEMTs; III-V semiconductor materials; Indium gallium arsenide; Indium phosphide; Lattices; Microwave technology; Radio frequency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location :
Leuven, Belgium
Print_ISBN :
0444894780
Type :
conf
Filename :
5435124
Link To Document :
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