DocumentCode
1903600
Title
Very non linear transconductance of highly delta-doped multichannel HEMTs
Author
Théron, D. ; Coupez, T. ; Bonte, B. ; Crosnier, Y.
Author_Institution
Institut d´´Electronique et de Micro-électronique du Nord-UMR CNRS no9929, Département Hyperfréquences et Semiconducteurs, Bât P3 Université des Sciences et Technologies de Lille, 59655 Villeneuve d´´Ascq, FRANCE.
fYear
1992
fDate
14-17 Sept. 1992
Firstpage
397
Lastpage
400
Abstract
This paper presents the evolution with structural parameters of the linearity of the transconductance of multichannel HEMTs measured under low and microwave frequencies. Compared to theoretical calculations, the measured transconductance is in good agreement excepted at high doping levels. These discrepancies are attributed to parasitic effects. The discussion of the different possibilities brings us to conclude that the gate leakage current is most probably involved in the observed phenomena.
Keywords
Doping; Frequency measurement; HEMTs; Leakage current; Linearity; MODFETs; Microwave frequencies; Microwave measurements; Structural engineering; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location
Leuven, Belgium
Print_ISBN
0444894780
Type
conf
Filename
5435125
Link To Document