DocumentCode
1903628
Title
Hot-Electron Induced Degradation in AlGaAs/GaAs HEMTs
Author
Tedesco, C. ; Canali, C. ; Magistral, F. ; Paccagnella, A. ; Zanoni, E.
Author_Institution
Dipartimento di Elettronica ed Informatica, Via Gradenigo 6a, 35131, Padova, ITALY
fYear
1992
fDate
14-17 Sept. 1992
Firstpage
405
Lastpage
408
Abstract
We present the first data on rapid degradation of electrical characteristics induced by hot electrons in AlGaAs/GaAs HEMTs. Degradation can be attributed to deep levels generated in the access region between gate and drain contacts possibly at the interfaces between GaAs cap layer and SiN passivation and/or the semiconductor layers in the gate-drain region.
Keywords
Contacts; Degradation; Electric variables; Electrons; Gallium arsenide; HEMTs; Impact ionization; MODFETs; Passivation; Silicon compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location
Leuven, Belgium
Print_ISBN
0444894780
Type
conf
Filename
5435127
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