Title :
A 45GHz AlGaAs/GaAs HBT IC Technology without Ion-Implantation
Author :
Prasad, S.J. ; Vetanen, B. ; Haynes, C. ; Park, S. ; Beers, I. ; Diamond, S. ; Pubanz, G. ; Ebner, J. ; Sanielevici, S. ; Agoston, A.
Author_Institution :
Electronics Research Labs, MS 50-223, Tektronix, Beaverton, OR 97077, USA
Abstract :
A 45GHz HBT IC technology with 1.4THz Schottky diodes is described. The process is mesa isolated and implant-free. The process integrates NiCr resistors, MIM capacitors and air-bridge inductors. A divide-by-eight prescaler shows good performance up to 13.5GHz. A pulser circuit using the Schottky diodes produced a voltage pulse with 10.35ps rise time.
Keywords :
Capacitance; Circuits; Gallium arsenide; Heterojunction bipolar transistors; Inductors; Isolation technology; MIM capacitors; Resistors; Schottky diodes; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location :
Leuven, Belgium
