DocumentCode :
1903682
Title :
Analysis of Static Latchup in a Vertical IGBT Device Operating at 300K and 77K
Author :
Liu, C.M. ; Kuo, J.B.
Author_Institution :
Dept. of Electrical Eng., Microelectronics Lab., National Taiwan University
fYear :
1993
fDate :
6-7 March 1993
Firstpage :
111
Lastpage :
112
Keywords :
Anodes; Cathodes; Doping; Electron mobility; Insulated gate bipolar transistors; Microelectronics; P-i-n diodes; PIN photodiodes; Temperature; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Modeling & Simulation, 1993. SMS Technical Digest. 1993 Symposium on
Conference_Location :
Taipei, Taiwan
Print_ISBN :
0-7803-1225-2
Type :
conf
DOI :
10.1109/SMS.1993.664581
Filename :
664581
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1903682
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