DocumentCode

1903682

Title

Analysis of Static Latchup in a Vertical IGBT Device Operating at 300K and 77K

Author

Liu, C.M. ; Kuo, J.B.

Author_Institution

Dept. of Electrical Eng., Microelectronics Lab., National Taiwan University

fYear

1993

fDate

6-7 March 1993

Firstpage

111

Lastpage

112

Keywords

Anodes; Cathodes; Doping; Electron mobility; Insulated gate bipolar transistors; Microelectronics; P-i-n diodes; PIN photodiodes; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Modeling & Simulation, 1993. SMS Technical Digest. 1993 Symposium on

Conference_Location

Taipei, Taiwan

Print_ISBN

0-7803-1225-2

Type

conf

DOI

10.1109/SMS.1993.664581

Filename

664581