A New Programming Disturbance Phenomenon in NAND Flash Memory By Source/Drain Hot-Electrons Generated By GIDL Current

Author

Lee, Jae-Duk ; Lee, Chi-Kyung ; Lee, Myung-Won ; Kim, Han-Soo ; Park, Kyu-Charn ; Lee, Won-Seong

Author_Institution

Memory Bus., Samsung Electron. Co. Ltd., Gyungki-Do

fYear

2006

fDate

12-16 Feb. 2006

Firstpage

31

Lastpage

33

Abstract

A new programming disturbance phenomenon in the NAND flash cell operation is introduced, which we have modeled and named as "source/drain hot-carrier injection disturbance" (abbr. "hot-carrier disturbance"). The source/drain hot electrons are supplied from gate-induced drain leakage current at the GSL (ground-select line) transistor gate edge and are accelerated in the source/drain region of GSL-WLO (word line 0) cell, then are injected to the WLO cell. The simulation results show that the space of GSL-WLO cell should be kept over 110 nm to suppress the hot-carrier disturbance, which is also verified by experiment

Keywords

NAND circuits; flash memories; hot carriers; leakage currents; GIDL current; GSL WLO cell; NAND flash memory; gate-induced drain leakage current; ground-select line transistor gate edge; programming disturbance phenomenon; source-drain hot-carrier injection disturbance; source-drain hot-electrons; Acceleration; Electrons; Hot carrier injection; Hot carriers; Leakage current; Low voltage; Monitoring; Tunneling; Writing;

fLanguage

English

Publisher

ieee

Conference_Titel

Non-Volatile Semiconductor Memory Workshop, 2006. IEEE NVSMW 2006. 21st

Conference_Location

Monterey, CA

Print_ISBN

1-4244-0027-9

Type

conf

DOI

10.1109/.2006.1629481

Filename

1629481