Title :
Effects of buried p-layers on substrate-trap induced phenomena in GaAs MESFETs
Author :
Kunihiro, K. ; Nogome, M. ; Ohno, Y.
Author_Institution :
Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan
Abstract :
We investigate the effects of buried p-layers (BP-layers) on substrate-trap induced frequency dispersion of drain conductance in GaAs MESFETs. Our experiments show that the condition of the BP-layers significantly influences their effectiveness in suppressing trap-induced low-frequency anomalies. These results can be well explained by the self-backgating model. While suppressing trap-induced phenomena, a BP-layer itself may cause current transients at higher frequencies due to parasitic capacitance increase; this is also investigated in detail.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; buried layers; capacitance; electron traps; gallium arsenide; semiconductor device models; GaAs; GaAs MESFETs; buried p-layers; current transients; drain conductance; frequency dispersion; low-frequency anomalies; parasitic capacitance increase; self-backgating model; substrate-trap induced phenomena; Electrodes; Electrostatics; FETs; Frequency measurement; Gallium arsenide; Impedance measurement; Laboratories; MESFETs; National electric code; Parasitic capacitance;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-3504-X
DOI :
10.1109/GAAS.1996.567846
