Title :
A High Cost-Performance and Reliable 3-Level MLC NAND Flash Memory Using Virtual Page Cell Architecture
Author :
Park, Ki-Tae ; Choi, Jungdal ; Cho, Sungkyu ; Choi, Yunho ; Kim, Kinam
Author_Institution :
Semicond. R/D Center, Samsung Electron. Co. Ltd., Kyungi-Do
Abstract :
A new high cost-performance NAND Flash memory using 3-level MLC and virtual page cell architecture has been proposed. It provides 20% die size saving and 3 times fast program speed compared to conventional SLC and MLC, respectively. The proposed method can be a good choice of the market demanding both low cost and high performance as well as high reliability
Keywords :
NAND circuits; circuit reliability; flash memories; 3-level MLC NAND Flash memory; high cost-performance flash memory; high reliability; program speed; virtual page cell architecture; Bandwidth; Consumer electronics; Costs; Digital audio players; Digital cameras; Engines; Error correction codes; Nonvolatile memory; Switches; Universal Serial Bus;
Conference_Titel :
Non-Volatile Semiconductor Memory Workshop, 2006. IEEE NVSMW 2006. 21st
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0027-9
DOI :
10.1109/.2006.1629482
