Title :
Forward body bias for microprocessors in 130nm technology generation and beyond
Author :
Keshavarzi, A. ; Narendra, S. ; Bloechel, B. ; Borkar, S. ; De, V.
Author_Institution :
Microprocessor Res., Intel Labs., Hillsboro, OR, USA
Abstract :
Device and test chip measurements show that forward body bias (FBB) can be used effectively to improve performance and reduce complexity of a 130nm dual-V/sub T/ technology, reduce leakage power during burn-in and standby, improve circuit delay and robustness, and reduce active power. FBB allows performance advantages of low temperature operation to be realized fully without requiring transistor redesign, and also improves V/sub T/ variations, mismatch, and g/sub m/ /spl times/ r/sub 0/ product.
Keywords :
delays; integrated circuit design; integrated circuit measurement; leakage currents; microprocessor chips; 130 nm; FBB; active power; burn-in; circuit delay; dual-V/sub T/ technology; forward body bias; leakage power; low temperature operation; microprocessors; robustness; test chip measurements; transistor redesign; Circuit testing; Doping; MOSFETs; Microprocessors; Optical wavelength conversion; Power generation; Power measurement; Robustness; Semiconductor device measurement; Temperature;
Conference_Titel :
VLSI Circuits Digest of Technical Papers, 2002. Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-7310-3
DOI :
10.1109/VLSIC.2002.1015113
