Title :
The influence of MBE-layer design on the high frequency performance of Si/SiGe HBTs
Author :
Gruhle, A. ; Kibbel, H. ; Kasper, E.
Author_Institution :
Daimler-Benz AG, Research Center Ulm, Wilhelm-Runge-Str. 11, D-7900 Ulm, Germany
Abstract :
The high frequency performances of MBE-grown Si/SiGe HBTs with different layer designs have been compared. The base transit time is of particular importance. It is very sensitive to the distribution and possible outdiffusion of the base doping. The influence of i-layers and Ge grading has been investigated. The best devices reached a transit frequency of 52 GHz, the highest value reported for SiGe HBTs with high base doping.
Keywords :
Design engineering; Doping; Dry etching; Fabrication; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Metallization; Microelectronics; Silicon germanium;
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location :
Leuven, Belgium
