Title :
Effects of Source Diffusion on SILC and Cycling-Induced Charge Loss in Source-Bias Erase Flash Cells
Author :
Chen, Chun ; Kessenich, Jeff ; Rudeck, Paul ; Ghodsi, Ramin ; Kinney, Wayne ; Bicksler, Andrew ; Prall, Kirk ; Nevill, Lee ; Mihnea, Andrei
Author_Institution :
Micron Technol. Inc., Boise, ID
Abstract :
A recent report reveals that in source-bias erase flash cells, light source doping can cause room temperature erratic charge loss after program/erase cycling. In this paper, we present tunnel oxide hole trapping and stress induced leakage current (SILC) measurements under source-bias erase stress conditions, in cell structures with different source doping profiles. Data suggests the deep depletion in cell source during erase causes hole trapping in tunnel oxide above the source diffusion, which is responsible for the room temperature charge loss after P/E cycling for light doping source
Keywords :
circuit reliability; doping; flash memories; hole traps; leakage currents; stress effects; SILC; cycling-induced charge loss; light source doping; program-erase cycling; room temperature erratic charge loss; source diffusion; source-bias erase flash cells; stress induced leakage current; tunnel oxide hole trapping; Acceleration; Charge carrier processes; Current measurement; Doping; Lead compounds; Light sources; Stress; Temperature; Tunneling; Voltage;
Conference_Titel :
Non-Volatile Semiconductor Memory Workshop, 2006. IEEE NVSMW 2006. 21st
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0027-9
DOI :
10.1109/.2006.1629485
