Title :
A Novel SONOS Memory with HfSiON/Si3N4/HfSiON Stack for Improved Retention
Author :
van Schaijk, R. ; van Duuren, M. ; Akil, N. ; Huerta, A. ; Beckx, S. ; Neuilly, F. ; Rittersma, Z. ; Slotboom, M. ; Van Elshocht, S. ; Wouters, J.
Author_Institution :
Philips Res., Katholieke Univ., Leuven
Abstract :
A novel SONOS device with nitrided hafnium silicate (HfSiON) as top and bottom dielectric, used in memory arrays up to 26kbit, is reported for the first time. Compared with `classical´ SONOS, where the nitride-trapping layer is sandwiched between silicon oxide (SiO2 ) (Libsch, 1998), these memory arrays show excellent performance, especially for data retention
Keywords :
dielectric materials; hafnium compounds; multilayers; nitrogen compounds; semiconductor storage; silicon compounds; HfSiON-Si3N4-HfSiON; SONOS memory; SiO2; data retention; memory arrays; nitride-trapping layer; nitrided hafnium silicate; Charge carrier processes; Dielectric devices; Energy barrier; Hafnium; High K dielectric materials; High-K gate dielectrics; SONOS devices; Silicon; Sufficient conditions; Tunneling;
Conference_Titel :
Non-Volatile Semiconductor Memory Workshop, 2006. IEEE NVSMW 2006. 21st
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0027-9
DOI :
10.1109/.2006.1629489
