• DocumentCode
    1903908
  • Title

    A Novel SONOS Memory with HfSiON/Si3N4/HfSiON Stack for Improved Retention

  • Author

    van Schaijk, R. ; van Duuren, M. ; Akil, N. ; Huerta, A. ; Beckx, S. ; Neuilly, F. ; Rittersma, Z. ; Slotboom, M. ; Van Elshocht, S. ; Wouters, J.

  • Author_Institution
    Philips Res., Katholieke Univ., Leuven
  • fYear
    2006
  • fDate
    12-16 Feb. 2006
  • Firstpage
    50
  • Lastpage
    51
  • Abstract
    A novel SONOS device with nitrided hafnium silicate (HfSiON) as top and bottom dielectric, used in memory arrays up to 26kbit, is reported for the first time. Compared with `classical´ SONOS, where the nitride-trapping layer is sandwiched between silicon oxide (SiO2 ) (Libsch, 1998), these memory arrays show excellent performance, especially for data retention
  • Keywords
    dielectric materials; hafnium compounds; multilayers; nitrogen compounds; semiconductor storage; silicon compounds; HfSiON-Si3N4-HfSiON; SONOS memory; SiO2; data retention; memory arrays; nitride-trapping layer; nitrided hafnium silicate; Charge carrier processes; Dielectric devices; Energy barrier; Hafnium; High K dielectric materials; High-K gate dielectrics; SONOS devices; Silicon; Sufficient conditions; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Non-Volatile Semiconductor Memory Workshop, 2006. IEEE NVSMW 2006. 21st
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    1-4244-0027-9
  • Type

    conf

  • DOI
    10.1109/.2006.1629489
  • Filename
    1629489
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1903908