Title :
Low voltage (1.2V) and high performance mobile DRAM device technology with dual poly-silicon gate using plasma nitrided gate oxide
Author :
Hong, S.H. ; Koo, B.Y. ; Jeon, T.S. ; Hyun, S.J. ; Shin, Y.G. ; Chung, U-in ; Moon, J.T.
Author_Institution :
Semicond. R&D Center, Samsung Electron. Co., Ltd., Kyunggi-Do, South Korea
Abstract :
The plasma nitrided gate oxide process has been developed and applied for mobile DRAM with low operating voltage. As a result, we confirm that plasma nitrided gate oxide can block the boron penetration in DRAM, which has a higher thermal budget than other devices. The nitrogen bonding status and profile are investigated to check the change in transistor and gate oxide characteristics.
Keywords :
CMOS memory circuits; DRAM chips; low-power electronics; nitridation; plasma materials processing; 1.2 V; Si; boron penetration blocking; dual polysilicon gate; low voltage DRAM; mobile DRAM; nitrogen bonding profile; nitrogen bonding status; plasma nitrided gate oxide process; thermal budget; Boron; Doping; Low voltage; Nitrogen; Plasma applications; Plasma devices; Plasma properties; Plasma sources; Random access memory; Silicon;
Conference_Titel :
Solid-State Device Research conference, 2004. ESSDERC 2004. Proceeding of the 34th European
Print_ISBN :
0-7803-8478-4
DOI :
10.1109/ESSDER.2004.1356586
