A Simple Charge-Pumping Method to Measure the Logarithmic-Time Dependence of Trapped Oxide Charge in p-MOSFET´s

Hot-carrier degradations of p-MOSFET´s are studied with the correlations between the charge-pumping technique and transconductance measurements. It is found that the degraded region, consisted of trapped oxide-charges at the drain, is spreading logarithmically in time. This model provides the basis of a new lifetime prediction technique for p-MOSFET´s.