• DocumentCode
    1904018
  • Title

    Gate Disturb Reduction in a Silicon Nanocrystal Flash EEPROM by Means of Natural Threshold Voltage Reduction

  • Author

    Swift, Craig T. ; Hoefler, Alex ; Kirichenko, Taras ; Muralidhar, Ramachandran ; Prinz, Erwin ; Rao, Rajesh ; Rinkenberger, Glenn ; Sadd, Michael ; Steimle, Robert

  • fYear
    2006
  • fDate
    2006
  • Firstpage
    56
  • Lastpage
    57
  • Keywords
    CMOS technology; Doping profiles; EPROM; Indium; Nanocrystals; Nonvolatile memory; Silicon; Substrates; Tellurium; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Non-Volatile Semiconductor Memory Workshop, 2006. IEEE NVSMW 2006. 21st
  • Conference_Location
    Monterey, CA, USA
  • Print_ISBN
    1-4244-0027-9
  • Type

    conf

  • DOI
    10.1109/.2006.1629492
  • Filename
    1629492
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1904018