A new substrate current free nLIGBT for junction isolated technologies

Author

Bakeroot, Benoit ; Doutreloigne, Jan ; Moens, Peter

Author_Institution

Univ. Gent, Belgium

fYear

2004

fDate

21-23 Sept. 2004

Firstpage

461

Lastpage

464

Abstract

This paper presents a new lateral insulated gate bipolar transistor (LIGBT) for junction isolated technologies, the key property of which is a vertical isolation structure consisting of two buried layers on top of each other. This structure not only allows the suppression of substrate currents, it also yields an nLIGBT that can be used as a high-side switch. The proposed nLIGBT is introduced in an existing 80 V smart power technology without the costly need of defining new layers. It has a forward biased safe operating area (FBSOA) comparable to the DMOS devices in this technology and it can compete with DMOS devices when used as a large driver. Together with an equivalent circuit, two dimensional simulation has been used to verify the device´s performance.

Keywords

driver circuits; equivalent circuits; insulated gate bipolar transistors; power bipolar transistors; power semiconductor switches; semiconductor device models; 2D simulation; 80 V; FBSOA; driver device; equivalent circuit; forward biased safe operating area; high-side switch; junction isolated technologies; lateral insulated gate bipolar transistor; smart power technology; stacked buried layers; substrate current free nLIGBT; substrate current suppression; vertical isolation structure; Ambient intelligence; CMOS technology; Cathodes; Circuit simulation; Dielectric substrates; Equivalent circuits; Integrated circuit technology; Isolation technology; Switches; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research conference, 2004. ESSDERC 2004. Proceeding of the 34th European

Print_ISBN

0-7803-8478-4

Type

conf

DOI

10.1109/ESSDER.2004.1356591

Filename

1356591