Title :
Simulation of High Energy Implantation Profiles in Crystalline Silicon
Author :
Gong, L. ; Bogen, S. ; Frey, L. ; Jung, W. ; Ryssel, H.
Author_Institution :
Lehrstuhl fÿr Elektronische Baulelemente, Universitÿt Erlangen-Nÿrnberg, Artilleriestrasse 12, 8520 Erlangen. F.R.G.
Abstract :
The sum of two normalized Pearson IV distributions has been used for describing the high energy implantation profiles with boron and phosphorus into crystalline silicon. The required range parameters for this description were extracted by fitting them to experimental SIMS-profiles. The number of range parameters can be reduced to five for both of boron and phosphorus.
Keywords :
Boron; CMOS process; CMOS technology; Crystallization; Implants; Ion implantation; Microelectronics; Parameter extraction; Power engineering and energy; Silicon;
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location :
Leuven, Belgium
