DocumentCode :
1904141
Title :
Process Analysis using RSM and Simulation
Author :
Cecchetti, M. ; Lissoni, M. ; Lombardi, C. ; Marmiroli, A.
Author_Institution :
SGS THOMSON MICROELECTRONICS, Via Olivetti 2, Agrate Brianza - Italia
fYear :
1992
fDate :
14-17 Sept. 1992
Firstpage :
511
Lastpage :
514
Abstract :
In this paper a statistical analysis of an advanced CMOS process performed using the Response Surface Method (RSM) applied to process/device simulation is presented. The statistical distribution of the most important electrical parameters (threshold voltages, saturation currents, ...) of the active devices have been predicted starting from the distributions of the input parameters (implant doses, furnace temperatures, ..). The simulated results are compared with data collected in a fabrication line and discussed.
Keywords :
Analytical models; CMOS process; Fabrication; Furnaces; Implants; Response surface methodology; Statistical analysis; Statistical distributions; Temperature distribution; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location :
Leuven, Belgium
Print_ISBN :
0444894780
Type :
conf
Filename :
5435150
Link To Document :
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