Title :
Cycling behavior of nitride charge profile in NROM-type memory cells
Author :
Furnemont, A. ; Rosmeulen, M. ; Van Houdt, J. ; Maes, H. ; De Meyer, K.
Author_Institution :
IMEC, Leuven
Abstract :
Cycling of NROM-type memory cells leads to a dipolar distribution inside the nitride layer. This effect is due to a mismatch between hole and electron injected profiles resulting from conventional NROM operation. An extraction technique based on CP measurements allows the detailed observation of the mismatch. The proposed model explains the relation between the charge distributions and the cycling behavior which is experimentally confirmed by changing the programming and erasing conditions
Keywords :
nitrogen compounds; read-only storage; semiconductor storage; CP measurements; NROM-type memory cells; charge distributions; charge-pumping measurements; cycling behavior; dipolar distribution; erasing conditions; extraction technique; nitride charge profile; nitride layer; programming conditions; Channel hot electron injection; Charge carrier processes; Charge pumps; Current measurement; Dielectric measurements; Electron traps; Electronic mail; Equations; Semiconductor device modeling; Threshold voltage;
Conference_Titel :
Non-Volatile Semiconductor Memory Workshop, 2006. IEEE NVSMW 2006. 21st
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0027-9
DOI :
10.1109/.2006.1629497
