A fully Analytical Back-Gate Bias Effect Model for n-Channel Silicon Mesefet Devices with Back Channel Implant

Author

Sim, J.H. ; Tang, M.C. ; Kuo, J.B.

Author_Institution

Dept. of Electrical Eng., National Taiwan University

fYear

1993

fDate

6-7 March 1993

Firstpage

113

Lastpage

114

Keywords

Analytical models; Doping profiles; Electrostatics; Implants; MESFETs; Silicon; Substrates; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Modeling & Simulation, 1993. SMS Technical Digest. 1993 Symposium on

Conference_Location

Taipei, Taiwan

Print_ISBN

0-7803-1225-2

Type

DOI

10.1109/SMS.1993.664583

Filename

664583

Link To Document