Title :
A fully Analytical Back-Gate Bias Effect Model for n-Channel Silicon Mesefet Devices with Back Channel Implant
Author :
Sim, J.H. ; Tang, M.C. ; Kuo, J.B.
Author_Institution :
Dept. of Electrical Eng., National Taiwan University
Keywords :
Analytical models; Doping profiles; Electrostatics; Implants; MESFETs; Silicon; Substrates; Threshold voltage;
Conference_Titel :
Semiconductor Modeling & Simulation, 1993. SMS Technical Digest. 1993 Symposium on
Conference_Location :
Taipei, Taiwan
Print_ISBN :
0-7803-1225-2
DOI :
10.1109/SMS.1993.664583
