Title :
NROM Window Sensing for 2 and 4-bits per cell Products
Author :
Shappir, Assaf ; Lusky, Eli ; Cohen, Guy ; Eitan, Boaz
Author_Institution :
Saifun Semicond. Ltd., Netanya
Abstract :
The NROM nonvolatile memory device (Eitan et al., 2000) is a unique localized charge trapping based technology, which is vastly being adopted by the industry, due to its native two physical bits per cell operation. Through the insights gained from NROM device physics, substantial improvements in product performance and reliability have been attained. Window sensing has allowed not only high reliability, fast ramping 2-bits per cell products, but also brought 4-bits per cell operation into reality
Keywords :
circuit reliability; read-only storage; semiconductor storage; 2 bit; 2 bits per cell operation; 4 bit; 4-bits per cell products; NROM device physics; NROM nonvolatile memory device; NROM window sensing; Bellows; Costs; Dielectrics; EPROM; Error correction; Hot carrier injection; MOSFET circuits; Nonvolatile memory; Predictive models; Threshold voltage;
Conference_Titel :
Non-Volatile Semiconductor Memory Workshop, 2006. IEEE NVSMW 2006. 21st
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0027-9
DOI :
10.1109/.2006.1629498
