DocumentCode
1904233
Title
Extending endurance of NROM memories to over 10 million program/erase cycles
Author
Roizin, Yakov ; Pikhay, Evgeny ; Lisiansky, Michael ; Heiman, Alexey ; Alon, Eli ; Aloni, Efraim ; Fenigstein, Amos
fYear
2006
fDate
2006
Firstpage
74
Lastpage
75
Keywords
Charge carrier processes; Degradation; Electrodes; Electron traps; High K dielectric materials; Poles and towers; SONOS devices; Substrates; Threshold voltage; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Non-Volatile Semiconductor Memory Workshop, 2006. IEEE NVSMW 2006. 21st
Conference_Location
Monterey, CA, USA
Print_ISBN
1-4244-0027-9
Type
conf
DOI
10.1109/.2006.1629501
Filename
1629501
Link To Document