Title :
Extraction of the Appropriate Material Property for Realistic Modeling of Through-Silicon-Vias using μ-Raman Spectroscopy
Author :
Okoro, C. ; Yang, Y. ; Vandevelde, B. ; Swinnen, B. ; Vandepitte, D. ; Verlinden, B. ; De Wolf, I.
Author_Institution :
IMEC, 75 Kapeldreef, B-3001 Leuven, Belgium. Katholieke Universiteit Leuven, Dept. Mechanical Engineering, Belgium, Email:okoro@imec.be Tel.: +32 16287740
Abstract :
Experimental μ-Raman spectroscopy (μRS) results are used to determine the appropriate plastic yield criterion for an accurate finite element modeling of stress in and near copper filled through-silicon-vias (TSV). It is found that the strain-hardening yield criterion gives the most accurate correlation between the ¿RS results and the finite element modeling. The verified yield criterion is used to simulate the effective keep-away-zone of transistors from the TSV. It is shown that transistor proximity is influenced by the via diameter.
Keywords :
Capacitive sensors; Copper; Equations; Frequency; Material properties; Phonons; Raman scattering; Silicon; Spectroscopy; Through-silicon vias;
Conference_Titel :
Interconnect Technology Conference, 2008. IITC 2008. International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
978-1-4244-1911-1
Electronic_ISBN :
978-1-4244-1912-8
DOI :
10.1109/IITC.2008.4546912
