DocumentCode :
1904328
Title :
New Model Proposed for Switching Mechanism of ReRAM
Author :
Kinoshita, K. ; Tamura, T. ; Aso, H. ; Noshiro, H. ; Yoshida, C. ; Aoki, M. ; Sugiyama, Y. ; Tanaka, H.
fYear :
2006
fDate :
2006
Firstpage :
84
Lastpage :
85
Keywords :
Capacitors; Dielectric breakdown; Electrodes; Energy consumption; Inorganic materials; Mechanical factors; Semiconductor device modeling; Sputtering; Testing; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Non-Volatile Semiconductor Memory Workshop, 2006. IEEE NVSMW 2006. 21st
Conference_Location :
Monterey, CA, USA
Print_ISBN :
1-4244-0027-9
Type :
conf
DOI :
10.1109/.2006.1629505
Filename :
1629505
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1904328
