• DocumentCode
    1904328
  • Title

    New Model Proposed for Switching Mechanism of ReRAM

  • Author

    Kinoshita, K. ; Tamura, T. ; Aso, H. ; Noshiro, H. ; Yoshida, C. ; Aoki, M. ; Sugiyama, Y. ; Tanaka, H.

  • fYear
    2006
  • fDate
    2006
  • Firstpage
    84
  • Lastpage
    85
  • Keywords
    Capacitors; Dielectric breakdown; Electrodes; Energy consumption; Inorganic materials; Mechanical factors; Semiconductor device modeling; Sputtering; Testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Non-Volatile Semiconductor Memory Workshop, 2006. IEEE NVSMW 2006. 21st
  • Conference_Location
    Monterey, CA, USA
  • Print_ISBN
    1-4244-0027-9
  • Type

    conf

  • DOI
    10.1109/.2006.1629505
  • Filename
    1629505
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1904328