DocumentCode
1904338
Title
A Self-Aligned Air Gap Interconnect Process
Author
Chen, Hsien-Wei ; Jeng, Shin-Puu ; Tsai, Hao-Yi ; Liu, Yu-Wen ; Yu, CH ; Sun, YC
Author_Institution
Taiwan Semiconductor Manufacturing Company, Ltd. (TSMC), Hsinchu, Taiwan, R.O.C.
fYear
2008
fDate
1-4 June 2008
Firstpage
34
Lastpage
36
Abstract
A self-aligned air gap interconnect structure with sidewall reinforcement is developed. The new structure lowers the capacitance of 0.09um/0.09um (w/s) metal wires by as much as 25%, and exhibits low leakage current. As compared to un-protected air gaps, the structure also greatly improves the electromigration resistance and the misalignment margin for unlanded vias. Furthermore, the sidewall protection layer strengthens the overall mechanical strength and increases the packaging reliability.
Keywords
Air gaps; Capacitance; Dielectrics; Dry etching; Leakage current; Manufacturing processes; Protection; Resists; Semiconductor device packaging; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference, 2008. IITC 2008. International
Conference_Location
Burlingame, CA, USA
Print_ISBN
978-1-4244-1911-1
Electronic_ISBN
978-1-4244-1912-8
Type
conf
DOI
10.1109/IITC.2008.4546917
Filename
4546917
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