Excellent Resistance Switching Characteristics of Pt/Single-crystal Nb-Doped SrTiO3 Schottky Junction

Author

Sim, Hyunjun ; Seong, Dong-jun ; Chang, Man ; Hwang, Hyunsang

Author_Institution

Dept. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol.

fYear

2006

fDate

12-16 Feb. 2006

Firstpage

88

Lastpage

89

Abstract

The hysteretic resistance switching characteristics of Pt/Nb-doped STO Schottky junctions were investigated for nonvolatile memory applications. The Pt/single crystal Nb:STO Schottky junction exhibits excellent resistance switching characteristics such as stable pulse switching, uniform set/rest state and die-to-die uniformity. The switching mechanism might be explained by modulation of the Schottky tunnel barrier width by charging and discharging of electron in oxygen vacancy

Keywords

Schottky barriers; niobium; platinum; semiconductor junctions; semiconductor storage; strontium compounds; titanium compounds; Pt-SrTiO₃:Nb; Schottky tunnel barrier width; die-to-die uniformity; hysteretic resistance switching; nonvolatile memory applications; oxygen vacancy; resistance switching characteristics; single crystal Schottky junctions; stable pulse switching; Annealing; Electrons; Hydrogen; Hysteresis; Materials science and technology; Niobium; Nonvolatile memory; Surface resistance; Surface treatment; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Non-Volatile Semiconductor Memory Workshop, 2006. IEEE NVSMW 2006. 21st

Conference_Location

Monterey, CA

Print_ISBN

1-4244-0027-9

Type

conf

DOI

10.1109/.2006.1629507

Filename

1629507