• DocumentCode
    1904380
  • Title

    Enhanced switching reliability of a non-volatile phase-change memory device with an oxidized TiN electrode

  • Author

    Kang, Dae-Hwan ; Kim, In Ho ; Jeong, Jeung-hyun ; Cheong, Byung-ki ; Ahn, Dong-Ho ; Kim, Ki-Bum

  • fYear
    2006
  • fDate
    2006
  • Firstpage
    90
  • Lastpage
    91
  • Keywords
    Contact resistance; Electrodes; Fluctuations; Materials science and technology; Nonvolatile memory; Oxidation; Phase change memory; Tellurium; Tin; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Non-Volatile Semiconductor Memory Workshop, 2006. IEEE NVSMW 2006. 21st
  • Conference_Location
    Monterey, CA, USA
  • Print_ISBN
    1-4244-0027-9
  • Type

    conf

  • DOI
    10.1109/.2006.1629508
  • Filename
    1629508
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1904380