Title :
Generalized Phase Change Memory Scaling Rule Analysis
Author :
Kim, SangBum ; Wong, H. -S Philip
Author_Institution :
Center for Integrated Syst. & Dept. of Electr. Eng., Stanford Univ., CA
Abstract :
In this paper, we present a generalized scaling analysis for phase change memory in analytical forms which are verified by 3D finite-element electrothermal modeling. Our analytical solutions provide insights into the key device parameters that control the maximum temperature of the phase change memory cell and the minimum required programming voltage
Keywords :
finite element analysis; integrated circuit modelling; phase change materials; semiconductor storage; 3D finite-element electrothermal modeling; generalized scaling analysis; phase change memory cell; programming voltage; scaling rule; temperature control; Electric resistance; Electrothermal effects; Energy conservation; Phase change materials; Phase change memory; Resistance heating; Temperature; Thermal conductivity; Thermal resistance; Voltage;
Conference_Titel :
Non-Volatile Semiconductor Memory Workshop, 2006. IEEE NVSMW 2006. 21st
Conference_Location :
Monterey, CA
Print_ISBN :
1-4244-0027-9
DOI :
10.1109/.2006.1629509
