Analytical Study of leakage characteristics change during multilevel interconnect process using porogen-type porous SiOC (k=2.4)/Cu system

Author

Ohashi, N. ; Nakahira, J. ; Soda, E. ; Tomioka, K. ; Chikaki, S. ; Oda, N. ; Kondo, S. ; Saito, S.

Author_Institution

Research Dept. 2, Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba-shi, Ibaraki-ken, 305-8569, Japan, Phone:+81-298-49-1282, Fax:+82-298-49-1186, E-mail: ohhashi.naohumi@selete.co.jp

fYear

2008

fDate

1-4 June 2008

Firstpage

58

Lastpage

60

Abstract

The change in leakage I-V characteristics by multilevel processing of Cu interconnects with porogen-type p-SiOC (k=2.4) was investigated. Although the change can be eliminated by UV-cure condition, it was found that another process conditions can affect the leakage characteristics; the combination of NH3 plasma treatment after Cu-CMP and the additional UV-cure in multilevel process. It was also found that the influence of NH3 plasma damage on interface between p-SiOC and cap-CVD was decreased using low-pressure ion-reaction oriented trench etching (LP-RIE).

Keywords

Aluminum; Dielectrics; Etching; Lead compounds; Metallization; Plasma applications; Plasma density; Plasma materials processing; Plasma properties; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2008. IITC 2008. International

Conference_Location

Burlingame, CA, USA

Print_ISBN

978-1-4244-1911-1

Electronic_ISBN

978-1-4244-1912-8

Type

conf

DOI

10.1109/IITC.2008.4546925

Filename

4546925