Title :
Process Control and Physical Failure Analysis for Sub-100NM CU/Low-K Structures
Author :
Zschech, Ehrenfried ; Huebner, Rene ; Potapov, Pavel ; Zienert, Inka ; Meyer, Moritz Andreas ; Chumakov, Dmytro ; Geisler, Holm ; Hecker, Michael ; Engelmann, Hans-Juergen ; Langer, Eckhard
Author_Institution :
AMD Saxony LLC & Co. KG, Center for Complex Analysis, Wilschdorfer Landstrasse 110, D-01109 Dresden, Germany, Phone +49 351 277 4100, Fax +49 351 277 94100, Email ehrenfried.zschech@amd.com
Abstract :
For successfully developing and controlling BEoL structures of the 32 nm CMOS technology node and beyond, advanced analytical techniques are needed for process development and control, for physical failure localization and analysis as well as for the investigation of reliability-limiting degradation mechanisms. These challenges are discussed from the point of view of a high volume leading-edge manufacturing.
Keywords :
Bonding; CMOS technology; Copper; Degradation; Dielectric materials; Failure analysis; Microstructure; Plasma materials processing; Plasma measurements; Process control;
Conference_Titel :
Interconnect Technology Conference, 2008. IITC 2008. International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
978-1-4244-1911-1
Electronic_ISBN :
978-1-4244-1912-8
DOI :
10.1109/IITC.2008.4546927
