Title :
Structure-Designable Formation-Method of Super Low-k SiOC Film (k=2.2) by Neutral-Beam-Enhanced-CVD
Author :
Yasuhara, Shigeo ; Chung, Juhyun ; Tajima, Kunitoshi ; Yano, Hisashi ; Kadomura, Shingo ; Yoshimaru, Masaki ; Matsunaga, Noriaki ; Kubota, Tomohiro ; Ohtake, Hiroto ; Samukawa, Seiji
Author_Institution :
Institute of Fluid Science, Tohoku University
Abstract :
Ar neutral beam enhanced chemical vapor deposition can control the dielectric constant and film modulus of low-k SiOC deposited on Si substrates precisely because it avoids precursor dissociation due to electron collisions and UV photons in plasma. Optimizing the ratio between Si-O and Si-(CH3)x as well as the proportions of linear, network, and cage Si-O structures by changing the precursor, we obtained a k of 2.2 and a reasonable modulus by using either dimethyl diethoxy silane or dimethyl dimethoxy silane as a precursor.
Keywords :
Argon; Chemical vapor deposition; Dielectric materials; Electrons; Particle beams; Pressure measurement; Semiconductor films; Semiconductor materials; Substrates; Thickness measurement;
Conference_Titel :
Interconnect Technology Conference, 2008. IITC 2008. International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
978-1-4244-1911-1
Electronic_ISBN :
978-1-4244-1912-8
DOI :
10.1109/IITC.2008.4546929
