Title :
Post-Etch Cleaning for Porous Low K Integration: Impact of HF wet etch on "Pore-sealing" and "k recovery"
Author :
Broussous, L. ; Puyrenier, W. ; Rebiscoul, D. ; Rouessac, V. ; Ayral, A.
Author_Institution :
STMicroelectronics, 850, rue Jean Monnet, 38926 Crolles cedex, France., e-mail: lucile.broussous@st.com / Tel +33 (0) 4 38 92 28 25
Abstract :
We investigated the compatibility of "HF-Based" cleaning with porous low-k integration, and "pore-sealing" approach and specific attention was paid to ULK porosity evolution. We also tried to demonstrate if "k-recovery" could be achieved by thinning the modified surface layer in the pattern trench walls (plasma damaged layer).
Keywords :
Cleaning; Dielectric materials; Dielectrics and electrical insulation; Hafnium; Plasma applications; Plasma materials processing; Solvents; Surface morphology; Surface treatment; Wet etching;
Conference_Titel :
Interconnect Technology Conference, 2008. IITC 2008. International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
978-1-4244-1911-1
Electronic_ISBN :
978-1-4244-1912-8
DOI :
10.1109/IITC.2008.4546933
