• DocumentCode
    1904709
  • Title

    A Novel Isolation Scheme for Implementation in Very High Density AMG EPROM and FLASH EEPROM Arrays

  • Author

    Wolstenholme, Graham R ; Bergemont, Albert

  • Author_Institution
    National Semiconductor, Santa Clara, CA 95052, USA
  • fYear
    1992
  • fDate
    14-17 Sept. 1992
  • Firstpage
    253
  • Lastpage
    256
  • Abstract
    In this paper a novel isolation scheme for implementation in alternate metal virtual ground (AMG) EPROM and Flash EEPROM arrays is described. It is shown that, unlike the conventional LOCOS isolation, the new isolation scheme allows the AMO concept to be scaled below 0.6¿m geometries. Electrical results are presented for arrays with the new isolation scheme.
  • Keywords
    Density measurement; EPROM; Geometry; Isolation technology; Length measurement; Microelectronics; Particle measurements; Read only memory; Thickness measurement; Topology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
  • Conference_Location
    Leuven, Belgium
  • Print_ISBN
    0444894780
  • Type

    conf

  • Filename
    5435174