DocumentCode
1904709
Title
A Novel Isolation Scheme for Implementation in Very High Density AMG EPROM and FLASH EEPROM Arrays
Author
Wolstenholme, Graham R ; Bergemont, Albert
Author_Institution
National Semiconductor, Santa Clara, CA 95052, USA
fYear
1992
fDate
14-17 Sept. 1992
Firstpage
253
Lastpage
256
Abstract
In this paper a novel isolation scheme for implementation in alternate metal virtual ground (AMG) EPROM and Flash EEPROM arrays is described. It is shown that, unlike the conventional LOCOS isolation, the new isolation scheme allows the AMO concept to be scaled below 0.6¿m geometries. Electrical results are presented for arrays with the new isolation scheme.
Keywords
Density measurement; EPROM; Geometry; Isolation technology; Length measurement; Microelectronics; Particle measurements; Read only memory; Thickness measurement; Topology;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location
Leuven, Belgium
Print_ISBN
0444894780
Type
conf
Filename
5435174
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