DocumentCode :
1904738
Title :
Progress, Opportunities and Challenges in Modeling of Plasma Etching
Author :
Yang, Yang ; Wang, Mingmei ; Kushner, Mark J.
Author_Institution :
Department of Electrical and Computer Engineering, Iowa State University, 104 Marston Hall, Ames, IA 50011 USA, yangying@iastate.edu
fYear :
2008
fDate :
1-4 June 2008
Firstpage :
90
Lastpage :
92
Abstract :
The development of plasma etching processes is challenged by the complexity of the chemistries and the unpredictability in the performance of plasma tools due to sometimes subtle changes in design. Challenges also face the use of modeling and simulation to provide a computational assist to the development of these processes. Selected issues in developing this modeling capability will be discussed.
Keywords :
Etching; Frequency; Inductors; Plasma applications; Plasma chemistry; Plasma immersion ion implantation; Plasma materials processing; Plasma properties; Plasma simulation; Plasma transport processes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference, 2008. IITC 2008. International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
978-1-4244-1911-1
Electronic_ISBN :
978-1-4244-1912-8
Type :
conf
DOI :
10.1109/IITC.2008.4546934
Filename :
4546934
Link To Document :
بازگشت