Title :
Effects of Ru-Ta Alloy Barrier on Cu Filling and Reliability for Cu Interconnects
Author :
Mori, Kenichi ; Ohmori, Kazuyuki ; Torazawa, Naoki ; Hirao, Shuji ; Kaneyama, Syutetsu ; Korogi, Hayato ; Maekawa, Kazuyoshi ; Fukui, Shoichi ; Tomita, Kazuo ; Inoue, Makoto ; Chibahara, Hiroyuki ; Imai, Yukari ; Suzumura, Naohito ; Asai, Koyu ; Kojima, M
Author_Institution :
Renesas Technology Corp., 4-1, Mizuhara, Itami, Hyogo, 664-0005, Japan, Phone: +81-72-787-2510 E-mail : mori.kenichi@renesas.com
Abstract :
A Ru-Ta alloy is applied to Cu dual damascene interconnects due to its good wettability with Cu. Using Ru-Ta alloy film as a barrier layer, filling property of ECP-Cu is improved and complete filling for trenches of 45 nm in width can be achieved. Although further optimization of CMP process is necessary, Ru-Ta alloy barrier also improves estimated lifetime of electromigration.
Keywords :
Argon; Cobalt alloys; Conductivity; Copper alloys; Dielectrics; Electromigration; Filling; Nitrogen; Optical films; X-ray scattering;
Conference_Titel :
Interconnect Technology Conference, 2008. IITC 2008. International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
978-1-4244-1911-1
Electronic_ISBN :
978-1-4244-1912-8
DOI :
10.1109/IITC.2008.4546937
