DocumentCode
1904822
Title
Amorphous Ru / Polycrystalline Ru Highly Reliable Stacked Layer Barrier Technology
Author
Ogawa, Shinichi ; Tarumi, Nobuaki ; Abe, Mitsuhide ; Shiohara, Morio ; Imamura, Hiroki ; Kondo, Seiichi
Author_Institution
Back-End-Process Program, Semiconductor Leading Edge Technologies, Inc., Onogawa, Tsukuba, Ibaraki, 305-8569, Japan, E-mail : ogawa.shinichi@selete.co.jp
fYear
2008
fDate
1-4 June 2008
Firstpage
102
Lastpage
104
Abstract
An amorphous Ru (a-Ru) underneath polycrystalline Ru (p-Ru) stacked barrier structure (a-Ru/p-Ru) is proposed as a highly reliable barrier metal technology. The a-Ru with less grain boundary contacted to a dielectric layer showed higher barrier property than a conventional TaN/Ta or the p-Ru barrier, and the p-Ru layer with high adhesion to Cu material contacted to Cu interconnect showed three orders magnitude longer electro-migration life time than the TaN/Ta barrier.
Keywords
Adhesives; Amorphous materials; Argon; Conductivity; Crystallization; Dielectrics; Grain boundaries; Surface morphology; Surface resistance; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference, 2008. IITC 2008. International
Conference_Location
Burlingame, CA, USA
Print_ISBN
978-1-4244-1911-1
Electronic_ISBN
978-1-4244-1912-8
Type
conf
DOI
10.1109/IITC.2008.4546938
Filename
4546938
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