Title :
Study of comparison between the DCG-FGT and its equivalent circuit in MOS technology
Author :
Marzaki, A. ; Bidal, V. ; Laffont, R. ; Rahajandraibe, W. ; Portal, J.-M. ; Bouchakour, R.
Author_Institution :
ST-Microelectron., Rousset, France
Abstract :
In this paper, a comparison between the DCG-FGT (Dual-Control-Gate Floating-Gate Transistor) and its equivalent circuit composed of standard components is proposed. We demonstrate the DCG-FGT advantages with measurement and simulations under electrical simulator (ELDO). It is not easily to reproduce the DCG-FGT operating mode with standard MOS technology.
Keywords :
MOSFET; equivalent circuits; semiconductor device measurement; DCG-FGT; ELDO; dual-control-gate floating-gate transistor; electrical simulator; equivalent circuit; standard MOS technology; CMOS integrated circuits; Equivalent circuits; Integrated circuit modeling; Logic gates; MOSFET; Threshold voltage; DCG-FGT transistor; compact Modeling; low power; new device;
Conference_Titel :
Communications and Information Technologies (ISCIT), 2013 13th International Symposium on
Conference_Location :
Surat Thani
Print_ISBN :
978-1-4673-5578-0
DOI :
10.1109/ISCIT.2013.6645858
