DocumentCode
1904851
Title
CMOS Compatibility of Carbon Nanotubes?
Author
Milne, W.I. ; Wang, X ; Zhang, Y. ; Haque, S. ; Kim, S.M. ; Udrea, F. ; Robertson, J. ; Teo, K.B.K.
Author_Institution
Centre for Advanced Photonics and Electronics, Electrical Engineering Division, Engineering Department, Cambridge University, 9 JJ Thomson Avenue, Cambridge CB3 0FA, Tel: +44 1223 748334, Fax: +44 1223 748330, E-mail: wim@eng.cam.ac.uk
fYear
2008
fDate
1-4 June 2008
Firstpage
105
Lastpage
107
Abstract
In this paper, the growth and characterisation of both single and multi wall CNTs is described and a realistic appraisal of the future of CNTs in the electronics field will be provided. Although they are very unlikely, in the author´s opinion, to take over from silicon for use in the active devices such as transistors and diodes etc. in logic circuits their use in vias and interconnects in next generation integrated circuits is considered as being entirely feasible as is their use in transparent conducting contacts and sensors, thermal interface materials and solder joints.
Keywords
Appraisal; Carbon nanotubes; Conducting materials; Diodes; Integrated circuit interconnections; Logic circuits; Silicon; Thermal conductivity; Thermal sensors; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference, 2008. IITC 2008. International
Conference_Location
Burlingame, CA, USA
Print_ISBN
978-1-4244-1911-1
Electronic_ISBN
978-1-4244-1912-8
Type
conf
DOI
10.1109/IITC.2008.4546939
Filename
4546939
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