DocumentCode :
1904851
Title :
CMOS Compatibility of Carbon Nanotubes?
Author :
Milne, W.I. ; Wang, X ; Zhang, Y. ; Haque, S. ; Kim, S.M. ; Udrea, F. ; Robertson, J. ; Teo, K.B.K.
Author_Institution :
Centre for Advanced Photonics and Electronics, Electrical Engineering Division, Engineering Department, Cambridge University, 9 JJ Thomson Avenue, Cambridge CB3 0FA, Tel: +44 1223 748334, Fax: +44 1223 748330, E-mail: wim@eng.cam.ac.uk
fYear :
2008
fDate :
1-4 June 2008
Firstpage :
105
Lastpage :
107
Abstract :
In this paper, the growth and characterisation of both single and multi wall CNTs is described and a realistic appraisal of the future of CNTs in the electronics field will be provided. Although they are very unlikely, in the author´s opinion, to take over from silicon for use in the active devices such as transistors and diodes etc. in logic circuits their use in vias and interconnects in next generation integrated circuits is considered as being entirely feasible as is their use in transparent conducting contacts and sensors, thermal interface materials and solder joints.
Keywords :
Appraisal; Carbon nanotubes; Conducting materials; Diodes; Integrated circuit interconnections; Logic circuits; Silicon; Thermal conductivity; Thermal sensors; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference, 2008. IITC 2008. International
Conference_Location :
Burlingame, CA, USA
Print_ISBN :
978-1-4244-1911-1
Electronic_ISBN :
978-1-4244-1912-8
Type :
conf
DOI :
10.1109/IITC.2008.4546939
Filename :
4546939
Link To Document :
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