• DocumentCode
    1904856
  • Title

    10 Gbit/s Operation of Integrated BRS Laser-MISFET on Indium Phosphide

  • Author

    Post, G. ; Kazmierski, C. ; Delorme, F.

  • Author_Institution
    CNET, Laboratoire de Bagneux (FRANCE TELECOM), 196, avenue Henri Ravera, F-92220 BAGNEUX, France
  • fYear
    1992
  • fDate
    14-17 Sept. 1992
  • Firstpage
    219
  • Lastpage
    222
  • Abstract
    An integrated 1.3 ¿m optoelectronic transmitter combining a BRS laser with an InP MIS field effect transistor has been made. Epitaxy of the laser structure in a groove was compatible with subsequent InP FET ion implantations and annealing. With 10 mA laser threshold current and 80 mS/mm FETs of 2 × 250 ¿m gate width, the module features a transfer efficiency of 12 mW/V, a small-signal bandwidth of 7 GHz and an NRZ data rate of 10 Gbit/s.
  • Keywords
    Annealing; Diode lasers; Etching; FETs; Indium phosphide; Laser theory; MISFETs; Optical transmitters; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
  • Conference_Location
    Leuven, Belgium
  • Print_ISBN
    0444894780
  • Type

    conf

  • Filename
    5435181
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1904856