Title :
10 Gbit/s Operation of Integrated BRS Laser-MISFET on Indium Phosphide
Author :
Post, G. ; Kazmierski, C. ; Delorme, F.
Author_Institution :
CNET, Laboratoire de Bagneux (FRANCE TELECOM), 196, avenue Henri Ravera, F-92220 BAGNEUX, France
Abstract :
An integrated 1.3 ¿m optoelectronic transmitter combining a BRS laser with an InP MIS field effect transistor has been made. Epitaxy of the laser structure in a groove was compatible with subsequent InP FET ion implantations and annealing. With 10 mA laser threshold current and 80 mS/mm FETs of 2 × 250 ¿m gate width, the module features a transfer efficiency of 12 mW/V, a small-signal bandwidth of 7 GHz and an NRZ data rate of 10 Gbit/s.
Keywords :
Annealing; Diode lasers; Etching; FETs; Indium phosphide; Laser theory; MISFETs; Optical transmitters; Silicon; Substrates;
Conference_Titel :
Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European
Conference_Location :
Leuven, Belgium
